SI4800BDY-T1-E3 VISHAY SILICONIX N CHANNEL MOSFET, 30V, 9A, SOIC

ProducentVISHAY SILICONIX
Part Number

SI4800BDY-T1-E3 (SI4800BDYT1E3)

Specifications

N CHANNEL MOSFET, 30V, 9A, SOIC

Unit Price10,66 EUR
Minimum Order Quantity1
Tariff No.85411000
Lead Time36 weeks
Weight and Dimension0.558 Kg
DescriptionContinuous Drain Current Id: 9A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0185ohm Operating Temperature Max: 150°C Power Dissipation Pd: 800mW Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.8V Transistor Case Style: SOIC Transistor Polarity: N Channel
Datasheets
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