FDB8832 -FA Not Specified 30V 80A 2.1mO , Rthjc=0.5°C/W

ProducentNot Specified
Part Number

FDB8832 -FA (FDB8832FA)

Specifications

30V 80A 2.1mO , Rthjc=0.5°C/W

Unit Price2,00 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionMarking manufacturer FDB8832 Type of casing: SMD Case (shape): D2-Pak Type of component: SMD Configuration: 1*Transistor RoHS yes REACH no Electrical parameters: Udc (URRM, UCEO, Umax) 30 [V] Idc max (Tc/Ta=25÷160°C) 34 [A] Idc max (Tc/Ta=25°C) 34 [A] IF(AV) (Tc/Ta=150÷159°C) 80 [A] Pmax with heatsink (TC=25°C) 300 [W] Input Logic Level (UGS level) 5V RDS (on) 5V (UGS=4.5÷5.0V) 1.5 [mΩ] RDS (on) 10V (UGS=10÷15V) 1.4 [mΩ] trr recovery time (@25°C) 59 [ns] fmax max.frequency (max./typ.) 9999.9999 [MHz] Qg (Total Gate Charge) 100 [nC] Cin (Input Capacitance) 11400 [pF] Material, color, design: Material: !_si-silicon_! Thermal and mechanical parameters: Tmin (minimum working temperature) -55 [°C] Tmax (maximum working temperature) 175 [°C] Rth-c (thermal resistance) 0.5 [°C/W] Rth-a (thermal resistance) 62 [°C/W] Packaging and weight: Unit: ks Packaging (Number of units): 800
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