BSC028N06LS3 G Infineon Infineon BSC028N06LS3 G N-channel MOSFET Transistor, 8-pin PG-TDSON-8

ProducentInfineon
Part Number

BSC028N06LS3 G (BSC028N06LS3G)

Specifications

Infineon BSC028N06LS3 G N-channel MOSFET Transistor, 8-pin PG-TDSON-8

Unit Price2,68 EUR
Minimum Order Quantity1
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Weight and Dimension
DescriptionCategoryDC/DC Converter, High Frequency Switching Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Single Gate, Triple Source Dimensions5.35 x 6.1 x 1.1mm Height1.1mm Length5.35mm Maximum Continuous Drain Current100 A Maximum Drain Source Resistance4.8 mΩ Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation139 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypePG-TDSON-8 Pin Count8 Typical Gate Charge @ Vgs132 nC@ 0 → 10 V Typical Input Capacitance @ Vds10000 pF@ 30 V Typical Turn-Off Delay Time77 ns Typical Turn-On Delay Time19 ns Width6.1mm Product Details Infineon OptiMOS™3 Power MOSFETs, 60V and over OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs
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