IXGH56N60B3 Ixys IXYS IXGH56N60B3 N-channel IGBT Transistor, 350 A 600 V, 40kHz, 3-Pin TO-247
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| Producent | Ixys | | Part Number | IXGH56N60B3 (IXGH56N60B3) |
| Specifications | IXYS IXGH56N60B3 N-channel IGBT Transistor, 350 A 600 V, 40kHz, 3-Pin TO-247 |
| Unit Price | 7,72 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions16.26 x 5.3 x 21.46mm Height21.46mm Length16.26mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current350 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation330 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Package TypeTO-247 Pin Count3 Switching Speed40kHz Width5.3mm Product Details IGBT Discretes, IXYS IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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